| 摘要 |
<p>An image sensor (14) having a pixel array includes a sensor layer (202) comprising a plurality of photosensitive elements (203) of the pixel array, a circuit layer (204) comprising circuitry associated with the pixel array, and a crosstalk reduction layer (206) arranged between the sensor layer and the circuit layer and configured to reduce crosstalk between adjacent ones of the photosensitive elements. The crosstalk reduction layer may comprise, for example, an amorphous silicon germanium (a-SiGe) layer specifically configured to reduce red light crosstalk in the image sensor. The image sensor may be implemented in a digital camera or other type of digital imaging device.</p> |
