| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent a reduction in the number of saturation electrons even if the pixel size of a solid-state imaging device is reduced. Ž<P>SOLUTION: In the solid-state imaging device having an imaging region constituted by arraying cells including a photoelectric conversion part using photodiodes on a semiconductor substrate like a matrix, one floating diffusion layer 7 and one read circuit (reset transistor 4, amplification transistor 3) are shared by four diodes 2_11, 2_12, 2_21, 2_22 corresponding to two pixels in the row direction and two pixels in the column direction in the imaging region. Read lines 11, 12, 21, 22 are arranged in each gate of read transistors 13_11, 13_12, 13_21, 13_22 arranged according to each photodiode so that independent control pulses may be impressed, respectively, and read signals from the photodiodes arranged in the same row are mutually independently read to a vertical signal line 10 within one horizontal blanking period of signal scanning in the imaging region. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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