| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a metal semiconductor metal (MSM) type light receiving element which ensures an ultra high speed response and comprises a light absorption layer in which a hole remaining in the light absorption layer and disturbing acceleration, even after radiation of signal light is stopped, is instantaneously eliminated. <P>SOLUTION: The present invention relates to an MSM type light receiving element including a light absorption layer, that absorbs light and generates an electron-hole pair and at least one Schottky contact type electrode, wherein the light absorption layer includes an InAs layer or an InSb layer. The preferable thickness of the InAs layer or the InSb layer is 3 nm to 10 nm. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
