| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A semiconductor device including a metallic compound Hfx1Moy1Nz1 as an electrode. The work function of the electrode can be modulated by doping the metallic compound with dopants including nitrogen, silicon or germanium. The metallic compound of the present invention is applicable to PMOS, NMOS, CMOS transistors and capacitors.
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| 申请公布号 |
US2010025815(A1) |
申请公布日期 |
2010.02.04 |
| 申请号 |
US20080183077 |
申请日期 |
2008.07.31 |
| 申请人 |
LIN SHIAN-JYH;HUANG CHIH-WEI;LAI CHAO-SUNG;PENG HSING-KAN |
发明人 |
LIN SHIAN-JYH;HUANG CHIH-WEI;LAI CHAO-SUNG;PENG HSING-KAN |
| 分类号 |
H01L29/94;C01B21/00;H01L21/02 |
主分类号 |
H01L29/94 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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