发明名称 |
Method for manufacturing semiconductor device, and substrate processing apparatus |
摘要 |
A method for manufacturing a semiconductor device includes the steps of: loading a substrate into a reaction chamber; supplying reactive gases into the reaction chamber and processing the substrate; and unloading the processed substrate from the reaction chamber, wherein the step of processing the substrate includes: a first film formation step of setting the substrate to a first temperature and forming a first silicon film including impurity atoms on the substrate and a second film formation step of setting the substrate to a second temperature, which is lower than the first temperature, and forming a second silicon film that includes no impurity atoms or has an impurity concentration lower than that of the first silicon film on at least the first silicon film.
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申请公布号 |
US2010029089(A1) |
申请公布日期 |
2010.02.04 |
申请号 |
US20090458903 |
申请日期 |
2009.07.27 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
MAEDA TAKAHIRO;OWADA NOBUO |
分类号 |
H01L21/30 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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