| 摘要 |
The present invention includes an AuGeNi alloy layer (13) provided on an n-type GaAs layer; and a laminate provided on the AuGeNi alloy layer (13), the laminate being composed of a bonding metal layer (15, 17) and a barrier metal layer (16, 18) provided on the bonding metal layer (15, 17). The present invention includes two or more of the laminates. With this configuration, in a GaAs-based contact layer, particularly in an n-type electrode, the surface diffusion of Ga of the semiconductor and Ni of the AuGeNi alloy, which is needed to form an ohmic contact in the n-type electrode, can be suppressed, and a low-resistance ohmic electrode structure and a semiconductor element having the ohmic electrode structure can be provided.
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