METHOD FOR MANUFACTURING OXIDE SINTERED COMPACT, METHODS FOR MANUFACTURING OXIDE SINTERED COMPACT, SPUTTERING TARGET, OXIDE THIN FILM AND THIN FILM TRANSISTOR, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing an oxide sintered compact which does not generate a nodule, an arcing or the like when the oxide semiconductor device is formed and to provide a sputtering target.

SOLUTION: The method for manufacturing the oxide sintered compact comprises a step (A) of mixing a raw material containing at least an indium compound and a zinc compound, a step (B) of forming the mixture obtained by the step (A), a step (C) of holding the formed compact obtained by the step (B) for 1 hour or more after heating to a temperature zone region of more than 800°C and less than 1,200°C and a step (D) of sintering the compact after the step (C) at more than 1,200°C.

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