| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal having low average dislocation density and high crystallinity. Ž<P>SOLUTION: The method for growing the group III nitride crystal includes: a step of preparing a ground substrate 10 which contains a group III nitride seed crystal 10a having one main plane 10m, wherein the off angle θ of the main plane 10m to the ä0001} plane 10c of the group III nitride seed crystal 10a is within a range of 0.5-10.0°; and a step of growing a group III nitride crystal 20 on the main plane 10m by bringing a solution 17, obtained by dissolving a nitrogen-containing gas 15 into a solvent 13 containing a group III metal, into contact with the main plane 10m of the ground substrate 10. Further, in the process for growing the group III nitride crystal 20, the ground substrate 10 is arranged so that the inclination angle ϕ of the main plane 10m of the ground substrate 10 to the surface 17m of the solution 17 satisfies following relation: θ≤ϕ≤θ+26.5°. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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