| 摘要 |
PROBLEM TO BE SOLVED: To obtain long-term reliability at operation with high output power in a nitride semiconductor laser apparatus. SOLUTION: The nitride semiconductor laser apparatus has: a laminated structure 100 consisting of a plurality of nitride semiconductor layers including a multiple quantum well activate layer 16 which is a light-emitting layer and which has an outgoing end surface 100a and a reflection end surface 100b which are opposed to each other; and a plurality of protection films consisting of a dielectric body formed on the respective end surface. Among the plurality of protection films, a first protection film 40 contacting the reflection end surface 100a is made of an aluminum nitride (AlN). A second protection film 42 formed on the opposite surface of the reflection end surface 100a in the first protection film 40 is made of a silicon dioxide (SiO<SB>2</SB>). A third protection film 44 formed on the opposite surface of the first protection film 40 in the second protection film 42 is made of an aluminum nitride (AlN). COPYRIGHT: (C)2010,JPO&INPIT
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