<p>An image sensor includes a first sensor layer (101) having a first array of pixels and a second sensor (102) layer having a second array of pixels. Each pixel of the first and second arrays has a photodetector (140) for collecting charge in response to incident light, a charge-to- voltage conversion mechanism (144), and a transfer gate (142) for selectively transferring charge from the photodetector to the charge- to- voltage mechanism. The first and second sensor layers each have a thickness to collect light with a first and second preselected ranges of wavelengths, respectively. A circuit layer (120) is situated below the first sensor layer and has support circuitry (122) for the pixels of the first and second sensor layers, and interlayer connectors (130) are between the pixels of the first and second layers and the support circuitry.</p>
申请公布号
WO2010014138(A1)
申请公布日期
2010.02.04
申请号
WO2009US04051
申请日期
2009.07.13
申请人
EASTMAN KODAK COMPANY;TIVARUS, CRISTIAN, ALEXANDRU;MCCARTEN, JOHN, P.;SUMMA, JOSEPH, R.
发明人
TIVARUS, CRISTIAN, ALEXANDRU;MCCARTEN, JOHN, P.;SUMMA, JOSEPH, R.