SEMICONDUCTOR ON INSULATOR DEVICES CONTAINING PERMANENT CHARGE
摘要
<p>A lateral SOI device may include a semiconductor channel region connected to a drain region by a drift region. An insulation region on the drift layer is positioned between the channel region and the drain region. Permanent charges may be embedded in the insulation region sufficient to cause inversion in the insulation region. The semiconductor layer also overlies a global insulation layer, and permanent charges are preferably embedded in at least selected areas of this insulation layer too.</p>
申请公布号
WO2010014281(A1)
申请公布日期
2010.02.04
申请号
WO2009US41906
申请日期
2009.04.28
申请人
MAXPOWER SEMICONDUCTOR INC.;PAUL, AMIT;DARWISH, MOHAMED, N.