SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

Disclosed is a semiconductor device wherein a first side wall (23A) and a second side wall (24A) are formed on a lateral surface of a gate electrode (22A).  A first high-concentration impurity region (31A) is formed in a semiconductor substrate (10) along a side of the gate electrode (22A).  A second high-concentration impurity region (32A) is formed on the outer lateral side of the first high-concentration impurity region (31A) at a position deeper than the first high-concentration impurity region.  A low-concentration impurity region (33A) is formed at a position outer than the second side wall (24A) and deeper than the second high-concentration impurity region (32A), and the low-concentration impurity region (33A) has an impurity concentration lower than those of the first high-concentration impurity region (31A) and the second high-concentration impurity region (32A).