COPPER ALLOY MATERIAL FOR ELECTRICAL AND ELECTRONIC COMPONENTS, AND MANUFACTURING METHOD THEREFOR

摘要

Disclosed is a copper alloy material for electrical and electronic components that has a composition comprising 0.5-2.0 mass% Co, 0.1-0.5 mass% Si, and the remainder Cu and unavoidable impurities. The crystal grain diameter of the base material copper alloy is 3-35 mm, the particle diameter of a precipitate composed of Co and Si is 5-50 nm, and the density of the precipitate is 1×108 to 1×1010 particles/mm2. The tensile strength of the copper alloy material is at least 550 MPa, and the conductivity is at least 50% IACS.