Method for production of semiconductor structures on silicon germanium base, involves bringing germanium ions in volume of single crystal silicon wafer by ion implantation with high dose

摘要

The method involves bringing germanium ions in a volume of a single crystal silicon wafer by ion implantation with high dose, and exposing created arrangement to an intensive light pulse. The created arrangement is implanted with boron ions with energy, so that a positive negative transition is produced in the center germanium.