| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing degradation of a drive characteristic of a peripheral transistor. Ž<P>SOLUTION: As shown in Fig.2, this semiconductor device includes: a semiconductor substrate; an element isolation film formed to surround an element formation region AA of the semiconductor substrate; and a transistor arranged in the element formation region. The transistor includes: first and second diffusion layers formed in the element formation region; a channel region formed between the first and second diffusion layers; a gate insulation film formed on a surface of the channel region; and a gate electrode 4 arranged on the gate insulation film. A gate length LG2 of the gate electrode in a boundary part C between the element formation region AA and the element isolation film is larger than a gate length G1 of the gate electrode at the center part of the element formation region. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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