发明名称 |
RESISTANCE CHANGE ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR MEMORY |
摘要 |
A resistance change element including a first electrode; a second electrode; and an oxide film, including an oxide of the first electrode, formed at sides of the first electrode and sandwiched between the first electrode and the second electrode in a plurality of regions, wherein at least one of the regions includes a resistance part whose resistance value changes in accordance with a voltage applied to the first and second electrodes.
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申请公布号 |
US2010027319(A1) |
申请公布日期 |
2010.02.04 |
申请号 |
US20090511722 |
申请日期 |
2009.07.29 |
申请人 |
FUJITSU MICROELECTRONICS LIMITED |
发明人 |
NOSHIRO HIDEYUKI |
分类号 |
G11C11/00;H01L21/16;H01L47/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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