发明名称 |
SEMICONDUCTOR MEMORY DEVICE FOR LOW VOLTAGE |
摘要 |
A semiconductor memory device includes a first cell array including a plurality of unit cells and a bit line sense amplifying unit for sensing and amplifying data signals stored in the unit cells. Each unit cell is provided with a PMOS transistor and a capacitor. Therefore, the semiconductor memory device efficiently operates with low voltage without any degradation of operation speed.
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申请公布号 |
US2010027362(A1) |
申请公布日期 |
2010.02.04 |
申请号 |
US20090578358 |
申请日期 |
2009.10.13 |
申请人 |
KANG HEE-BOK;AHN JIN-HONG;LEE SANG-DON |
发明人 |
KANG HEE-BOK;AHN JIN-HONG;LEE SANG-DON |
分类号 |
G11C7/00;G11C5/14;G11C7/02 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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