| 摘要 |
In a conductive structure, method of forming the conductive structure, a vertical-type pillar transistor and a method of manufacturing the vertical-type pillar transistor, the conductive structure includes a pillar provided on a substrate. A first conductive layer pattern is provided on a sidewall of the pillar, at least a portion of the first conductive layer pattern facing the sidewall of the pillar. A second conductive layer pattern is provided on a surface of the first conductive layer pattern, the second conductive layer pattern facing the sidewall of the pillar. A hard mask pattern covers upper surfaces of the first conductive layer pattern and the pillar. The conductive structure includes an electric conductor with a relatively low resistance. The conductive structure may be used as an electrode of a memory device.
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