发明名称 METHOD FOR CREATING PATTERN
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method for creating a pattern for reducing deviation from a design pattern of a post-etching feature caused by a step feature that generates after rule-base OPC used for correcting a residual component of an OPC model. <P>SOLUTION: When an input design data is subjected to rule-base proximity correction in the process of forming a pattern based on the design data of an electronic device on a substrate to be exposed, the pattern is moved by calculating a correction amount by using a pattern side as a unit and then subjected to the model-base proximity correction to create an exposure data. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010026420(A) 申请公布日期 2010.02.04
申请号 JP20080190705 申请日期 2008.07.24
申请人 FUJITSU MICROELECTRONICS LTD 发明人 CHIJIMATSU TATSUO
分类号 G03F1/36;G03F1/68;G03F1/70;G06F17/50 主分类号 G03F1/36
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