| 摘要 |
A chamfering part is partially formed on the backside, opposite to the front side of a substrate on which epitaxial growth is performed. When a size of the substrate is set at x (mm), preferably length of the chamfering part applied to the backside of the substrate is set at 2 mm or more and 0.15x (mm) or less. In addition, when the substrate is placed on a flat surface, with the front side turned up, preferably height and depth of a gap formed between the substrate and the flat surface are set at 0.2 mm or more.
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