发明名称 |
NOVEL CONTACT ETCH STOP FILM |
摘要 |
A system and method for improved dry etching system. According to an embodiment, the present invention provides a partially completed integrated circuit device. The partially completed integrated circuit device includes a semiconductor substrate having a surface region. The partially completed integrated circuit device also includes an etch stop layer overlying the surface region. The etch stop layer is characterized by a thickness having at least a first thickness portion and a second thickness portion. The second thickness portion includes an etch stop surface region. The partially completed integrated circuit device additionally includes a silicon dioxide material provided within the first thickness portion of the etch stop layer. The partially completed integrated circuit device includes a silicon nitride material provided within the second thickness portion of the etch stop layer. In addition, the partially completed integrated circuit device includes a profile characterized by the silicon dioxide material in the first thickness portion changing to the silicon nitride material in the second thickness portion.
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申请公布号 |
US2010029090(A1) |
申请公布日期 |
2010.02.04 |
申请号 |
US20090578374 |
申请日期 |
2009.10.13 |
申请人 |
SHENZHEN BAK BATTERY CO., LTD.;SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION |
发明人 |
HO HOK MIN;MA CHING TIEN;SONG WOEI JI |
分类号 |
H01L21/3205 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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