发明名称 |
METHOD FOR MANUFACTURING SOI SUBSTRATE |
摘要 |
An object of an embodiment of the present invention to be disclosed is to prevent oxygen from being taken in a single crystal semiconductor layer in laser irradiation even when crystallinity of the single crystal semiconductor layer is repaired by irradiation with a laser beam; and to make substantially equal or reduce an oxygen concentration in the semiconductor layer after the laser irradiation comparing before the laser irradiation. A single crystal semiconductor layer which is provided over a base substrate by bonding is irradiated with a laser beam, whereby the crystallinity of the single crystal semiconductor layer is repaired. The laser irradiation is performed under a reducing atmosphere or an inert atmosphere.
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申请公布号 |
US2010029058(A1) |
申请公布日期 |
2010.02.04 |
申请号 |
US20090512141 |
申请日期 |
2009.07.30 |
申请人 |
SHIMOMURA AKIHISA;OHNUMA HIDETO;MOMO JUNPEI;YAMAZAKI SHUNPEI |
发明人 |
SHIMOMURA AKIHISA;OHNUMA HIDETO;MOMO JUNPEI;YAMAZAKI SHUNPEI |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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