摘要 |
A piezoelectric device having a Pb containing piezoelectric film, improved in durability without degrading piezoelectric property. Piezoelectric device (1) has lower electrode (12), piezoelectric film (13) which contains a Pb containing perovskite oxide represented by a general expression (P) below, and an upper electrode (14) on substrate (11) in this order, with average layer thickness Th of pyrochlore oxide layer (13p) is not greater than 20 nm. AaBbO3 --------------- (P) (where, A: at least one type of A-site element containing Pb as a major component, B: at least one type of B-site element selected from the group consisting of Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Sc, Co, Cu, In, Sn, Ga, Zn, Cd, Fe, and Ni, and O: an oxygen element.) |
申请人 |
FUJIFILM CORPORATION;HISHINUMA, YOSHIKAZU;KASAHARA, TAKEHIRO;NIHEI, YASUKAZU;FUJII, TAKAMICHI;OKAMOTO, YUUICHI;ARAKAWA, TAKAMI;NAONO, TAKAYUKI |
发明人 |
HISHINUMA, YOSHIKAZU;KASAHARA, TAKEHIRO;NIHEI, YASUKAZU;FUJII, TAKAMICHI;OKAMOTO, YUUICHI;ARAKAWA, TAKAMI;NAONO, TAKAYUKI |