| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a highly reliable nitride semiconductor light emitting element which exhibits high light extraction efficiency and high fabrication yield which reduce short circuit or current leak at a PN junction, and to provide a fabrication process therefor. <P>SOLUTION: A nitride semiconductor light emitting element including a conductive substrate, a bonding layer and a nitride semiconductor layer, in this order, is further provided with an insulating layer between the bonding layer and the nitride semiconductor layer, and the outer circumferential portion of the nitride semiconductor layer on the side of the bonding layer touches the surface of the insulating layer. The nitride semiconductor layer includes, at least, a second n-type nitride semiconductor layer, a p-type nitride semiconductor layer, a light emitting layer, and a first n-type nitride semiconductor layer, in this order, from side of the conductive substrate. <P>COPYRIGHT: (C)2010,JPO&INPIT |
