| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology for increasing specific resistivity of a titanium nitride film. SOLUTION: By irradiating the titanium nitride film formed on a semiconductor substrate with plasma obtained by changing a processing gas containing a rare gas or nitrogen without containing oxygen into plasma, specific resistivity of the titanium nitride film is increased. In this case, a gas containing a rare gas without containing oxygen, a gas containing nitrogen without containing oxygen, and a gas containing a rare gas and nitrogen without containing oxygen, are included in the processing gas. COPYRIGHT: (C)2010,JPO&INPIT |
