发明名称 PLASMA PROCESSING METHOD AND APPARATUS
摘要 In a plasma processing method, a conductor of an electrostatic chuck (ESC) and an electrode are electrically grounded prior to starting the plasma processing. A DC voltage with a polarity is applied to the conductor at a first time point after loading a substrate on the electrode. Then, the electrode is switched from an electrically grounded state to an electrically floating state at a second time point. A RF power is then applied to the electrode at a third time point. The application of the RF power is stopped at a fourth time point after a specified time has lapsed from the third time point. Then, the electrode is switched from the electrically floating state to the electrically grounded state at a fifth time point. Thereafter, the application of the DC voltage is stopped and the conductor is restored to a ground potential at a sixth time point.
申请公布号 US2010025372(A1) 申请公布日期 2010.02.04
申请号 US20090533700 申请日期 2009.07.31
申请人 TOKYO ELECTON LIMITED 发明人 TSUJIMOTO HIROSHI;NAGAIWA TOSHIFUMI;OTSUKA YUJI
分类号 B44C1/22;C23F1/08 主分类号 B44C1/22
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