| 摘要 |
In an atmosphere in which a silicon carbide (SiC) substrate implanted with impurities is annealed to activate the impurities, by setting a partial pressure of H2O to be not larger than 10-2 Pa, preferably not larger than 10-3 Pa, surface irregularity of the silicon carbide (SiC) substrate is controlled to be not greater than 2 nm, more preferably not greater than 1 nm in RMS value.
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