| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state image sensing device which is improved in photoelectric conversion efficiency of a sensor part and reduced in dark current due to a leakage current, and to provide a method for producing the same. Ž<P>SOLUTION: The solid-state image-sensing device comprises the pn-junction sensor part, a device isolation layer for isolating the sensor part into pixels, a first semiconductor region of a first conductivity type covering a lower portion and an end portion of the device isolation layer and coming into contact with a charge accumulation region of the sensor part, and a second semiconductor region of the first conductivity type having its end portion present inside the end portion of the element isolation layer, and coming into contact with a lower portion of the first semiconductor region and also coming into contact with a sensor region below the charge accumulation region. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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