| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor optical element capable of preventing diffusion of a p-type dopant. Ž<P>SOLUTION: This semiconductor optical element includes a p-type semiconductor substrate, a mesa structure part, a semi-insulating semiconductor embedded layer, and a diffusion prevention layer. The mesa structure part is formed on the p-type semiconductor substrate. The mesa structure part includes a p-type clad layer, an active layer, and an n-type clad layer which are laminated on the p-type semiconductor layer. In the semi-insulating semiconductor embedded layer, Fe is doped. The semi-insulating semiconductor embedded layer is formed on both sides of the mesa structure part in the direction crossing the lamination direction. The diffusion prevention layer is used for preventing the diffusion of the p-type dopant. The diffusion prevention layer is formed between the p-type semiconductor substrate and the mesa structure part and between the p-type semiconductor substrate and the semi-insulating semiconductor embedded layer. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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