NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE, AND MANUFACTURING METHOD THEREOF

摘要

<P>PROBLEM TO BE SOLVED: To suppress reduction in voltage resistance while suppressing the depth of an element separation region. Ž<P>SOLUTION: A drain region 2a is formed in the vicinity of a gate electrode MG1 and a source region 2b is formed on a surface layer of a silicon substrate 2 while the source region 2b is separated from the side end (end part) of a gate electrode MG1 in a plane direction by the film thicknesses of a silicon oxide film 11 and a silicon nitride film 12. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž