| 摘要 |
A method of a:DLC multi-layer doping growth comprising the steps of: forming a plurality of a:DLC layers in one process, thereby creating a plurality of successively connected PIN junctions, starting from a first junction and ending in a last junction, respective PIN junctions having p-type, n-type, and intrinsic layers; varying the sp3/sp2 ratio of at least the respective p-type and n-type layers and doping with at least silver to enhance electron mobility in respective PIN junctions; and connecting the plurality of a:DLC layers between electrodes at the first side and the second side to create a device having optimized spectral response to being oriented to a light source.
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