| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride-based compound semiconductor light-emitting element having excellent characteristics and high reliability without causing separation or the like in dividing a chip nor causing a short circuit in a semiconductor layer, in a manufacturing process of a nitride-based compound semiconductor light-emitting element. <P>SOLUTION: This method of manufacturing a nitride-based compound semiconductor light-emitting element includes processes of: forming a nitride-based compound semiconductor layer on a substrate for crystal growth; forming a second ohmic electrode and a second adhering metal layer on the nitride-based semiconductor layer in this order; forming a first ohmic electrode and a first adhering metal layer on a conductive substrate in this order; jointing the second adhering metal layer to the first adhering metal layer; removing the substrate for crystal growth; and exposing a surface of the second ohmic electrode by forming a first groove extending to the second ohmic electrode on the nitride-based compound semiconductor layer. <P>COPYRIGHT: (C)2010,JPO&INPIT |
