| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film magnetic memory device having a configuration capable of stably and efficiently supplying a data writing current without causing an increase in memory cell size. SOLUTION: Bit line drivers 50 for applying the data writing current are disposed on both ends of each of bit lines BL. One end of each of the bit lines is connected to a data bus RDB1 or RDB2 via a reading selection gate 65 for transmitting read data from the selected memory cell when the data are read. Each of the reading selection gates 65 is disposed outside from the bit line driver 50 for the memory cell array 10. With this configuration, the current path of the data writing current is shortened to reduce its path resistance, and the data writing current can be easily ensured. COPYRIGHT: (C)2010,JPO&INPIT
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