发明名称 |
PATTERN DEPENDENT STRING RESISTANCE COMPENSATION |
摘要 |
Pattern dependent string resistance compensation of a memory device is generally described. In one example, an electronic device includes a first string of memory cells and a first bit line coupled with the first string of memory cells wherein a memory cell of the first string of memory cells is read, in part, by pre-charging the first bit line through the first string of memory cells to compensate for resistance of unselected cells in the first string of memory cells.
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申请公布号 |
US2010027340(A1) |
申请公布日期 |
2010.02.04 |
申请号 |
US20080183544 |
申请日期 |
2008.07.31 |
申请人 |
DI IORIO ERCOLE ROSARIO;CONENNA PASQUALE |
发明人 |
DI IORIO ERCOLE ROSARIO;CONENNA PASQUALE |
分类号 |
G11C16/04;G11C7/00;G11C16/06 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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