发明名称 SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To improve a resistance of an integrated circuit against ESD (electrostatic discharge) without disturbing improvement of the performance and reduction of size of the integrated circuit. <P>SOLUTION: A protection circuit 104 is interposed between two input and output terminals. When ESD is generated, the input and output terminals are short-circuited by the protection circuit, so that overvoltage application to the circuit 103 is prevented. The circuit is electrically connected to the input and output terminals by connection wirings 110, 120. The circuit has a plurality of electrical connection parts between the circuit and the connection wiring, and the connection wiring is formed such that the wiring resistance between the input or output terminal and each of the connection parts is the same. Accordingly, if ESD is generated, voltage application on only one of the connection parts is prevented, whereby the possibility that the circuit will be broken by ESD is decreased. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010028109(A) 申请公布日期 2010.02.04
申请号 JP20090142509 申请日期 2009.06.15
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 FUKUOKA OSAMU;SHISHIDO HIDEAKI
分类号 H01L21/822;H01L27/04;H01L27/06;H01L27/08;H01L27/146;H01L29/786;H01L29/861 主分类号 H01L21/822
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