| 摘要 |
The invention relates to the use of chalcogenide devices exhibiting negative differential resistance in integrated circuits as programmable variable resistor components. The present invention is a continuously variable integrated analog resistor made of a chalcogenide material, such as a GeSeAg alloy. Continuously variable resistor states are obtained in the material via application of an electrical pulse to it. The pulse sequence, duration and applied potential determine the value of the resistance state obtained.
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