| 摘要 |
A method of fabricating an organic thin film transistor (OTFT) using surface energy control, whereby a gate electrode 120 is formed on the surface of a substrate 110, an insulating layer 130 is then deposited over the substrate 110 and the gate electrode 120, the surface energy of the insulating layer 130 is controlled and an organic semiconductor is deposited thereon to form a channel layer 150, the source 160 and drain 170 electrodes are then deposited onto the organic semiconductor channel layer 150. Alternatively a self-assembled monolayer (SAM) may be deposited between the insulator 130 and the organic semiconductor channel 150. Preferably the surface energy of the insulating layer 130 is controlled by irradiating the surface with UV light, such that the polarity of the insulating surface 130 matches the polarity of the organic semiconductor material. |
