| 摘要 |
PURPOSE: A manufacturing method of the semiconductor device is provided to control the electrical characteristic deterioration of a semiconductor device by preventing the exposure of a gate line. CONSTITUTION: A gate line is formed in a semiconductor substrate(200). A buffer layer is formed along the surface of a semiconductor substrate and a gate line. A spacer mask pattern(218a) is formed in the sidewall of the gate line including the buffer layer. An ion injection process is conducted. A thermal process for intensifying the thin film of the buffer layer is conducted. The spacer mask pattern is removed. The thermal process is conducted for 20 minutes at the temperature of 800°C or 900°C.
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