发明名称 METHOD FOR TESTING NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method for testing the nonvolatile semiconductor memory device, which can determine pass/fail of a function assigned to a redundant column area. <P>SOLUTION: The method for testing the nonvolatile semiconductor memory device includes a step of writing down a protection flag limiting the operations to a block on a predetermined page within the target block, a step of reading the data on the page containing the protect flag to transfer it to the data register, a step of masking the data in the column address areas except the protect flag in the data transferred to the data register, a step of detecting the defective bits en bloc in the data register, and a step of registering as a defective block when defective bits are detected in the data register. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010027181(A) 申请公布日期 2010.02.04
申请号 JP20080190804 申请日期 2008.07.24
申请人 TOSHIBA CORP 发明人 TANAKA SHUICHI
分类号 G11C29/12;G11C16/02;G11C16/04;G11C16/06;G11C29/04;G11C29/56 主分类号 G11C29/12
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