发明名称 VAPORIZER, SUBSTRATE PROCESSING APPARATUS, AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To inhibit the clogging of the spray nozzle of a vaporizer and the deposition of the raw material on the surface of the spray nozzle, thereby enhancing vaporization efficiency. SOLUTION: The vaporizer includes a vaporizing chamber for vaporizing a liquid raw material, a heater for heating the interior of the vaporizing chamber, a mixer for mixing the liquid raw material and a carrier gas, a spray nozzle for spraying the liquid raw material which has been mixed with the carrier gas in the mixer into the vaporizing chamber, a cooling member for cooling the spray nozzle and the mixer, and a cover for covering a part of the surface of the leading edge of the spray nozzle so as to be separated from the vaporizing chamber and forming a flow path for delivering a purge gas around the leading edge of the spray nozzle. A projection is provided to the center of the most leading edge of the leading edge of the spray nozzle. A spraying aperture is formed at the leading edge surface of the projection. A portion of the cover corresponding to the leading edge surface of the projection is open. The side of the projection is covered by the cover. A discharge hole is provided in a clearance between the side of the projection and the cover to discharge the purge gas delivered around the leading edge of the spray nozzle inside the vaporizing chamber. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010028000(A) 申请公布日期 2010.02.04
申请号 JP20080190519 申请日期 2008.07.24
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 TAKAGI KOSUKE;IMAI YOSHINORI;HORII SADAYOSHI;YAMAMOTO TAKAHARU
分类号 H01L21/31;C23C16/448 主分类号 H01L21/31
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