| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging element and the like which provides a highly precise detection signal for exposure control. SOLUTION: The charge storage layer 43 of a photodiode PD stores charges generated according to incident light, a floating diffusion FD receives the charge and converts the charge to a voltage, and a first amplification transistor AMPA outputs signals corresponding to the potential of the floating diffusion. A transfer transistor TX transfers the charge from the charge storage layer 43 to the photodiode PD, a floating gate 46 is turned to the potential corresponding to the charge stored in the charge storage layer 43, and a second amplification transistor outputs signals corresponding to the potential of the floating gate 46. COPYRIGHT: (C)2010,JPO&INPIT |
