PURPOSE: An image sensor having a light focusing structure is provided to focus in on a wide photoelectric conversion area by including a metal nano dot on a submicron sized floating body. CONSTITUTION: A plurality of pixel units are arranged in an array shape. A pixel unit comprises a first area(112) and a second area(114) in which materials having different polarities are doped. A photoelectric conversion region(116) is formed between the first area and the second area. At least one metal nano-dot(120) focuses incoming light on the photoelectric conversion region. The metal nano-dot is arranged on the semiconductor layer(110).
申请公布号
KR20100011291(A)
申请公布日期
2010.02.03
申请号
KR20080072438
申请日期
2008.07.24
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
CHA, DAE KIL;JIN, YOUNG GU;MIN, BOK KI;PARK, YOON DONG