| 摘要 |
<p>PURPOSE: A pattern formation method of a semiconductor device for preventing a non-uniformity of a pattern is provided to improve the program erase speed or the read operation speed by reducing a threshold voltage difference of a transistor. CONSTITUTION: An etching target layer(102) is formed on the top of a semiconductor substrate(100). A first hard mask film(104), a second hard mask film(106) and a third hard mask film(108) are successively laminated on the top of the etching target layer. A first and a second anti-reflection layers(110,112) are successively formed on the top of the third hard mask layer. A photoresist pattern(114) is formed on the top of the second anti-reflection layer. A sub-layer(116) is formed along the surface of the photoresist pattern in order to make narrow an opening width. A first treatment process for reducing the roughness of the surface of the second anti-reflection layer exposed is conducted.</p> |
