| 摘要 |
PURPOSE: A resistive memory device and a method for manufacturing the same are provided to improve the endurance of a resistivity memory device by preventing the occurrence of a set stuck phenomenon when a memory device is operated. CONSTITUTION: A bottom electrode(13) is formed on a substrate(10). A resistance layer(14) is formed on the bottom electrode. An upper electrode(16) is formed on the resistance layer. An oxygen diffusion prevention pattern(15b) is included in the interface of the upper electrode and the resistance layer. The oxygen diffusion prevention pattern is made from a thin film. Multiple oxygen diffusion prevention patterns are separated from each other.
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