发明名称 METHOD FOR MEASURING LOCATION ACCURACY OF MASK PATTERN AND APPARATUS FOR THE SAME
摘要 <p>PURPOSE: A method for measuring the location accuracy of a mask pattern and an apparatus for the same are provided to accurately measure positional precision by measuring the difference between a standard pattern and a measurement target pattern. CONSTITUTION: A chuck(210) is located on a stage(200). The chuck includes the standard pattern. An accurate position pattern is formed on a mask. The measurement target mask(220) is loaded on the chuck. The stage is moved so that it faces the measurement target mask. An image of the standard pattern and the measurement target mask are compared with each other and the accuracy of a position is measured. The measurement target mask comprises an align key pattern(225) or an overlay vernier.</p>
申请公布号 KR20100011224(A) 申请公布日期 2010.02.03
申请号 KR20080072353 申请日期 2008.07.24
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HA, TAE JOONG
分类号 H01L21/027;H01L21/66 主分类号 H01L21/027
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