发明名称 |
METAL WIRING OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME |
摘要 |
<p>PURPOSE: A metal wiring of a semiconductor device and a method for forming the same are provided to prevent the diffusion of a copper component by using a diffusion layer having a multi-layer. CONSTITUTION: A metal wiring of a semiconductor device comprises an insulating layer(102), a diffusion barrier layer(110), and a metal layer(112). The insulating layer is arranged on the semiconductor substrate(100). The insulating layer has the interconnection region. A diffusion protection layer is arranged in the interconnection region of the insulating layer. The diffusion barrier layer has a TaN film(104), a MoxOy film(106), and a Mo film(108). A metal layer is arranged on the diffusion barrier layer and fills the interconnection region of the insulating layer.</p> |
申请公布号 |
KR20100011800(A) |
申请公布日期 |
2010.02.03 |
申请号 |
KR20080073170 |
申请日期 |
2008.07.25 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
OH, JOON SEOK;YEOM, SEUNG JIN;KIM, BAEK MANN;JUNG, DONG HA;KIM, JEONG TAE;LEE, NAM YEAL;KIM, JAE HONG |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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