THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A thin film transistor substrate and a method for manufacturing the same are provided to facilitate a dry etching process for forming a contact hole. CONSTITUTION: A gate line and a height raising member(125) are formed. A gate insulating layer(140) is formed. A semiconductor(154), a data line including a source electrode(173) and a drain electrode(175) are formed. The first insulating layer is formed on the gate insulating layer and the data line. A light shielding member(220) is formed. Color filters(230R,230G) is formed on a pixel domain divided by the light shielding member. The second insulating layer is formed. Photo etching of the second insulating layer, the light shielding member or the color filter and the first insulating layer is performed. A contact hole(185) exposing a part overlapped with the height raising member of the drain electrode is formed.