| 摘要 |
PURPOSE: A wafer plating device which secures metallic ion uniformity of substrate plate for metal wiring is provided to improve plating efficiency by guiding the movement of metallic ion by making the metallic ion vortex. CONSTITUTION: A wafer plating device comprises a process chamber(10), a target member(20), a filter unit(30) and a vortex unit(40). The process chamber is provided with electrolyte from an electrolyte feed unit(12). The back side of a substrate(W) is supported with a chuck(13). And cathode is applied in substrate with a negative electrode unit(14). The target member is the metal plate which is connected to a positive electrode unit(21) and generates the metallic ion. The vortex unit is located between target member and the filter unit and changes electrolyte in the vortex direction(R). The vortex unit comprises first and second injection nozzles(41,43). A first jet hole(42) is formed on the first injection nozzle in the vortex direction and second jet holes(44) are formed in the second injection nozzle.
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