| 摘要 |
PURPOSE: A vertical string phase change random access memory device is provided to read/write a multi-bit reliably and simply by controlling the position of a phase change of a phase change material layer. CONSTITUTION: A phase change material layer(14) is interposed between a bottom electrode(12) and a top electrode(13). An insulating layer(15) surrounds the circumference of a phase change material layer. A plurality of gate layers(16) are laminated between a bottom electrode and an upper electrode and surround the insulating layer. An interlayer insulating layer(17) is arranged between the gate layers, the lower electrode, and the upper electrode. The phase change material has a perpendicular cylindrical rod shape and is electrically contacted with the top and bottom electrode.
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