METAL LINE OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: A metal line of a semiconductor device and a method for forming the same are provided to prevent damage to contact plug in etching process by removing a seam from the contact plug. CONSTITUTION: A semiconductor substrate(102) has a contact hole of the insulating layer(106) for forming the conductive film. The titan film(112) is formed on the insulating layer including the conductive film. A first nitride titan film(114a) is formed on the titan film. A second nitride titan film(114b) is formed on the first nitride titan film. The second nitride titan film contains titanium element less than the first nitride titan film. A metal wiring(116c) is formed on the second nitride titan film. The first nitride titan film is formed with the thickness of 100~200Å.